onsemi N-Kanal, THT MOSFET 650 V / 65 A 446 W, 3-Pin TO-247

Channel-Typ = N
Dauer-Drainstrom max. = 65 A
Drain-Source-Spannung max. = 650 V
Gehäusegröße = TO-247
Montage-Typ = THT
Pinanzahl = 3
Drain-Source-Widerstand max. = 40 mΩ
Channel-Modus = Enhancement
Gate-Schwellenspannung max. = 5V
Gate-Schwellenspannung min. = 3V
Verlustleistung max. = 446 W
Transistor-Konfiguration = Einfach
Gate-Source Spannung max. = ±30 V
Gate-Ladung typ. @ Vgs = 158 nC @ 10 Vmm
Betriebstemperatur min. = –55 °CV

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.Features 700 V @ TJ = 150 Ultra Low Gate Charge (Typ. Qg = 158 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1366pF) Excellent body diode performance (low Qrr, robust body diode) Optimized Capacitance Typ. RDS(on) = 32 mΩ Applications Telecommunication Cloud system Industrial Benefits Higher system reliability at low temperature operation Lower switching loss Lower switching loss Higher system reliability in LLC and Phase shift full bridge circuit Lower peak Vds and lower Vgs oscillation End Products Telecom power Server power EV charger Solar / UPS