STMicroelectronics SCTWA90N65G2V-4 N-Kanal, THT MOSFET 650 V / 119 A, 4-Pin HiP247-4

Channel-Typ = N
Dauer-Drainstrom max. = 119 A
Drain-Source-Spannung max. = 650 V
Serie = SCTWA90N65G2V-4
Montage-Typ = THT
Pinanzahl = 4
Drain-Source-Widerstand max. = 0.024 O
Channel-Modus = Enhancement
Gate-Schwellenspannung max. = 5V
Anzahl der Elemente pro Chip = 1

The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.High speed switching performance Very high operating junction temperature capability Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Source sensing pin for increased efficiency