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Toshiba TK N-Kanal, THT MOSFET 100 V / 207 A 255 W, 3-Pin TO-220

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Brand: Toshiba

Manufacturer part no.: TK100E10N1

Technical Data

Anzahl der Elemente pro Chip
1mm
Channel-Modus
Enhancement
Channel-Typ
N
Dauer-Drainstrom max.
207 A
Drain-Source-Spannung max.
100 V
Drain-Source-Widerstand max.
3,4 mΩ
Gate-Schwellenspannung max.
4V
Gate-Source Spannung max.
-20 V, +20 V
Höhe
15.1mm
Montage-Typ
THT

Product description

Channel-Typ = N
Dauer-Drainstrom max. = 207 A
Drain-Source-Spannung max. = 100 V
Serie = TK
Montage-Typ = THT
Pinanzahl = 3
Drain-Source-Widerstand max. = 3,4 mΩ
Channel-Modus = Enhancement
Gate-Schwellenspannung max. = 4V
Verlustleistung max. = 255 W
Transistor-Konfiguration = Einfach
Gate-Source Spannung max. = -20 V, +20 V
Anzahl der Elemente pro Chip = 1mm
Höhe = 15.1mm

MOSFET N-Kanal, Serie TK100, Toshiba

Product offer

€2.69

€3.20 incl. VAT plus shipping cost

Delivery time of about 1 daysCondition: New

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Identifications

Product Type
MOSFET
GTIN
5059041667784