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STMicroelectronics MDmesh N-Kanal, THT MOSFET 800 V / 17 A 190 W, 3-Pin TO-220

STMICROELECTRONICS Logo

Brand: STMICROELECTRONICS

Manufacturer part no.: STP18NM80

Product no.: P-CC4KXP

Technical Data

Channel-Modus
Enhancement
Channel-Typ
N
Dauer-Drainstrom max.
17 A
Drain-Source-Spannung max.
800 V
Drain-Source-Widerstand max.
295 mΩ
Gate-Ladung typ. @ Vgs
70 nC @ 10 Vmm
Gate-Schwellenspannung max.
5V
Gate-Schwellenspannung min.
3V
Gate-Source Spannung max.
-30 V, +30 V
Höhe
15.75mm

Product description

Channel-Typ = N
Dauer-Drainstrom max. = 17 A
Drain-Source-Spannung max. = 800 V
Serie = MDmesh
Montage-Typ = THT
Pinanzahl = 3
Drain-Source-Widerstand max. = 295 mΩ
Channel-Modus = Enhancement
Gate-Schwellenspannung max. = 5V
Gate-Schwellenspannung min. = 3V
Verlustleistung max. = 190 W
Transistor-Konfiguration = Einfach
Gate-Source Spannung max. = -30 V, +30 V
Gate-Ladung typ. @ Vgs = 70 nC @ 10 Vmm
Höhe = 15.75mm

N-Kanal MDmesh™, 800 V/1500 V, STMicroelectronics

Product offer

€6.92

€8.23 incl. VAT plus shipping cost

Out of stockCondition: New

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Identifications

Product Type
MOSFET
GTIN
5059042887150